1 UD0018 n-ch 100v fast switching mosfets symbol parameter rating units v ds drain-source voltage 100 v v gs gate-sou r ce voltage 20 v i d @t c =25 continuous drain current, v gs @ 10v 1 45 a i d @t c =100 continuous drain current, v gs @ 10v 1 28 a i d @t a =25 continuous drain current, v gs @ 10v 1 6.6 a i d @t a =70 continuous drain current, v gs @ 10v 1 5.3 a i dm pulsed drain current 2 100 a eas single pulse avalanche energy 3 98 mj i as avalanche current 41 a p d @t c =25 total power dissipation 4 90 w p d @t a =70 total power dissipation 4 2 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 62 /w r jc thermal resistance junction-case 1 --- 1.4 /w id 100v 22m ? 45a the UD0018 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD0018 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter z networking dc-dc power system z led tv back light absolute maximum ratings thermal data to252 pin configuration product summery bv dss r ds(on) bv dss r ds(on)
2 n-ch 100v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 100 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =1ma --- 0.096 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =30a --- 18 22 m v gs(th) gate threshold voltage v gs =v ds , i d =250ua 2.5 --- 4.5 v v gs(th) v gs(th) temperature coefficient --- -5.5 --- mv/ i dss drain-source leakage current v ds =80v , v gs =0v , t j =25 --- --- 1 ua v ds =80v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =30a --- 27 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 1.9 3.8 q g total gate charge (10v) v ds =80v , v gs =10v , i d =30a --- 27.6 38.6 nc q gs gate-source charge --- 11.4 16 q gd gate-drain charge --- 7.9 11.1 t d(on) turn-on delay time v dd =50v , v gs =10v , r g =3.3 , i d =30a --- 15.6 31.2 ns t r rise time --- 17.2 31 t d(off) turn-off delay time --- 16.8 33.6 t f fall time --- 9.2 18.4 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 1890 2645 pf c oss output capacitance --- 268 375 c rss reverse transfer capacitance --- 67 94 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =30a 53 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 45 a i sm pulsed source current 2,6 --- --- 100 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =30a , di/dt=100a/s , t j =25 --- 34 --- ns q rr reverse recovery charge --- 47 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v ds =25v,v gs =10v,l=0.1mh,i as =41a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD0018
3 n-ch 100v fast switching mosfets typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) v.s t j fig.6 normalized r dson v.s t j UD0018
4 n-ch 100v fast switching mosfets 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t j peak = t c + p dm x r jc t on t 0.02 0.01 0.05 0.1 0.3 duty=0.5 single pulse fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UD0018
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